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Irf840pbf N-Channel 500V 8A (Tc) 125W (Tc) Mosfet Transistor to-220ab Irf840pbf Irf840

Purchase Qty. / FOB Price:

Get Latest Price

US$ 0.50 / Piece Min. Order: 1 Piece

Production Capacity:

10000PCS/Day

Model NO.:

IRF840PBF

Certification:

RoHS

Encapsulation Structure:

Chip Transistor

Installation:

SMD Triode

Power Level:

Medium Power

Structure:

Mosfet

Material:

Silicon

Fet Type:

N-Channel

Technology:

Mosfet (Metal Oxide)

Drain to Source Voltage (Vdss):

500 V

Current - Continuous Drain (ID) @ 25:

8A (Tc)

Drive Voltage (Max RDS on, Min RDS on):

10V

RDS on (Max) @ ID, Vgs:

850mohm @ 4.8A, 10V

Vgs(Th) (Max) @ ID:

4V @ 250µa

Gate Charge (Qg) (Max) @ Vgs:

63 Nc @ 10 V

Vgs (Max):

±20V

Input Capacitance (CISS) (Max) @ Vds:

1300 PF @ 25 V

Operating Temperature:

-55°c ~ 150°c (Tj)

Mounting Type:

Through Hole

Package / Case:

to-220-3

Power Dissipation (Max):

125W (Tc)

Supplier Device Package:

to-220ab

Transport Package:

Standard

Specification:

Standard

Origin:

Original

ShenZhen Nova Semiconductor Co., Ltd.

Member Since: 2021

Rating5.0/5

Business Type: Manufacturer/Factory

Shenzhen, Guangdong, China

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