• Rie Machine-RF Reactive Ion Etching
  • Rie Machine-RF Reactive Ion Etching
  • Rie Machine-RF Reactive Ion Etching
  • Rie Machine-RF Reactive Ion Etching
  • Rie Machine-RF Reactive Ion Etching
  • Rie Machine-RF Reactive Ion Etching

Rie Machine-RF Reactive Ion Etching

After-sales Service: Installation, Training
Warranty: One Year Warranty
Type: Electrical Etching Machine
Object: Silicon-Based:Si/Sio2/Sinxsic
Usage: Corrosion & Hollowed-out
Certification: ISO9001: 2000, CE
Diamond Member Since 2017

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Basic Info.

Model NO.
MD-200RIE
Etching Type
Reactive Ion Etching
Precision
High Precision
Condition
New
Transport Package
Wooden Case
Specification
1170*750*1080mm
Trademark
Minder-Hightech
Origin
China
Production Capacity
10set/Month

Product Description

Reactive ionomer etching machine
Rie Machine-RF Reactive Ion Etching
Item MD150-RIE MD200-RIE MD200C-RIE
Product size ≤6 inches ≤8 inches ≤8 inches
RF power source 0-300W/500W/1000W Adjustable,automatic matching
Molecular pump -/620(L/s)/1300(L/s)/Custom Antiseptic620(L/s)/1300(L/s)/Custom
Foreline pump Mechanical pump/dry pump Dry pump
Process pressure Uncontrolled pressure/0-1Torr controlled pressure
Gas type H/CH4/O2/N2/Ar/SF6/CF4/
CHF3/C4F8/NF3/Custom
(Up to 9 channels, no corrosive & toxic gas)
H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels)
Gas range 0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/custom
LoadLock Yes/No Yes
Sample tem control 10°C~Room tem/-30°C~100°C/Custom -30°C~100°C /Custom
Back helium cooling Yes/No Yes
Process cavity lining Yes/No Yes
Cavity wall tem control No/Roomtem~60/120°C Room tem-60/120°C
Control System Auto/custom
Etching material Silicon-based:Si/SiO2/SiNx···
IV-IV: SiC
Magnetic materials/alloy materials
Metallic material: Ni/Cr/Al/Au.....
Organic material: PR/PMMA/HDMS/Organic
film......
Silicon-based: Si/SiO2/SiNx......
III-V(3): InP/GaAs/GaN......
IV-IV: SiC
II-VI (3): CdTe......
Magnetic materials/alloy materials
Metallic material: Ni/Cr/A1/Au......
Organic material: PR/PMMA/HDMS /organic film...

Process result
Silicon-based material etching
Silicon-based materials, nano-imprint patterns, array
patterns and lens pattern etching
Rie Machine-RF Reactive Ion Etching
InP normal temperature etching
Pattern etching of InP based devices used in optical communication, including waveguide structure, resonant cavity structure ridge structure etc
Rie Machine-RF Reactive Ion Etching
SiC material etching
Suitable for microwave devices, power devices, etc

Rie Machine-RF Reactive Ion Etching
Physical sputtering, etching  Organic materiale tching
It is applied to the etching of difficult to etch materials such as some metals (such as Ni / Cr) and ceramics, and the patternede tching of materials is realized by physical bombardment. It is used for etching and removal of organic compounds such as photoresist (PR)/ PMMA / HDMS / polymer
Rie Machine-RF Reactive Ion Etching
Cermet film material (Au/Ni/Cr/Al2O3)

 

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