Nanowin 6 Inch Free-Standing Semi-Insulating Sic Substrates/ Sic Epitaxial Wafer/ Wide Band Gap Materials/High Power Semiconductor

Suzhou Nanowin Science and Technology Co., Ltd(NANOWIN), founded in Suzhou Industry Park,China in 2007, is a high-tech company devoting to developing technologies to fabricate high-quality nitride semiconductor materials. NANOWIN's key advantage is unrivaled materials expertise, and owns essential patents in GaN substrate and growth technologies. NANOWIN offers standard and customized free-standing GaN substrate and GaN/sapphire templates with extra low dislocations densities, which are suitable for applications in high-power LED, blue and green LD, HEMTs, high-power electronic/electric devices. Our mission is bringing key values to the related industries, such as full color display, semiconductor lighting, communication, and renewable energy, and being a pioneer in the industry applications of nitride applications of nitride semiconductors.


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SPEC:
2-inch Si-doped GaN/Sapphire Substrates
Item GaN-T-C-N-C50
Ga face
16±1 mm
M axis of GaN
A axis of GaN
50.8±0.2 mm
C plane(0001)
Dimension 50.8 ± 0.1 mm
Thickness 4.5 ± 0.5 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ± 0.1°
Orientation Flat of GaN (1-100) 0 ± 0.2°, 16 ± 1 mm
Conduction Type N-type
Resistivity (300K) < 0.05 Ω·cm
Carrier Concentration > 1 x 1018 cm-3 (≈ doping concentration)
Mobility ~ 200 cm2/V·s
Dislocation Density < 5 x 108 cm-2 (estimated by FWHMs of XRD)
Structure 4.5 ± 0.5 μm nGaN/~ 50 nm uGaN buffer layer/430 ± 25 μm sapphire
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ± 0.1°
Orientation Flat of Sapphire (11-20) 0 ± 0.2°, 16 ± 1 mm
Back Side Roughness 1 ± 0.2 μm [single side polished (SSP)]
0.2 ± 0.1 nm [double side polished (DSP)]
Useable Area > 90% (edge and macro defects exclusion)
Package Packaged in a cleanroom in containers:
single wafer box (< 5 PCS) or cassette (≥ 5 PCS)