• N Channel IGBT Transistor to-220f Transistor Rjp63K2
  • N Channel IGBT Transistor to-220f Transistor Rjp63K2
  • N Channel IGBT Transistor to-220f Transistor Rjp63K2
  • N Channel IGBT Transistor to-220f Transistor Rjp63K2
  • N Channel IGBT Transistor to-220f Transistor Rjp63K2
  • N Channel IGBT Transistor to-220f Transistor Rjp63K2

N Channel IGBT Transistor to-220f Transistor Rjp63K2

Certification: RoHS
Shape: DIP
Working Frequency: High Frequency
Encapsulation Structure: DIP
Power Level: High Power
Material: Plastic and Copper
Diamond Member Since 2016

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Rating: 5.0/5
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Basic Info.

Model NO.
RJP63K2
Power Dissipation-Max (ABS)
25 W
Polarity/Channel Type
N-Channel
Product Number
Rjp63K2
Detailed Description
Transistor
Category
IGBT
Gate-Emitter Voltage-Max
30 V
Transport Package
Standard Packaging
Specification
Plastic and copper
Trademark
CHN
Origin
China

Product Description


N Channel IGBT Transistor to-220f Transistor Rjp63K2


N Channel IGBT Transistor to-220f Transistor Rjp63K2
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: V CE(sat) = 1.9 V typ
High speed switching: t r = 60 ns typ, t f = 200 ns typ.
N Channel IGBT Transistor to-220f Transistor Rjp63K2
 
N Channel IGBT Transistor to-220f Transistor Rjp63K2
N Channel IGBT Transistor to-220f Transistor Rjp63K2

N Channel IGBT Transistor to-220f Transistor Rjp63K2N Channel IGBT Transistor to-220f Transistor Rjp63K2

 

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