| Encapsulation Structure: | Chip Transistor |
|---|---|
| Installation: | Through Hole |
| Function: | Power Triode, Mosfet |
| Material: | Silicon |
| Additional Feature: | Avalanche Rated |
| Packing Type: | Tube |
| Samples: |
|---|
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| Category | Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single |
| Package | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
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