• IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220
  • IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220
  • IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220
  • IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220
  • IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220
  • IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220

IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220

shape: SMD
Conductive Type: Bipolar Integrated Circuit
Integration: MSI
Technics: Semiconductor IC
MFG.: infineon
D/C: 19+
Samples:
US$ 4/Piece 1 Piece(Min.Order)
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Customization:
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Basic Info.

Model NO.
IRF640NPBF
Package
to-220
Quality
Genuine New Original
Transport Package
Box
Origin
China
HS Code
8542390000
Production Capacity
1000000PCS

Product Description

Description

IRF640NPBF : Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-220AB Tube

Package: BGA

Mfr. Part#: IRF640NPBF

Mfr.: INFINEON

Datasheet: pdf
IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220
(e-mail or chat us for PDF file)

ROHS Status: rohs, PB FREE
IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220

Quality: 100% Original

Warranty: 180 days

 

 

 

Part Status Active  
FET Type N-Channel  
Technology MOSFET (Metal Oxide)  
Drain to Source Voltage (Vdss) 200V  
Current - Continuous Drain (Id) @ 25°C 18A (Tc)  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V  
Vgs(th) (Max) @ Id 4V @ 250µA  
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V  
Vgs (Max) ±20V  
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V  
FET Feature -  
Power Dissipation (Max) 150W (Tc)  
Operating Temperature -55°C ~ 175°C (TJ)  
Mounting Type Through Hole  
Supplier Device Package TO-220AB  
Package / Case TO-220-3


Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Key Features

  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead Free







IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220







 


IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220


IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220

IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220

IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220

IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220
IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220

IRF640NPBF Trans MOSFET N-CH 200V 18A TO-220

Why choosing us

  • Located in Shenzhen, the electronic market center of China.
  • 100% guarantee components quality: Genuine Original.
  • Sufficient stock on your urgent demand.
  • Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
  • Faster shipment: In stock components can ship the same day .
  • 24 Hours service 

 

Notice:

  1. Product images are for reference only.
  2. You can contact sales person to apply for a better price.
  3.  For more products, Pls do not hesitate to contact our Sales team. 

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Trading Company
Registered Capital
100000 RMB
Plant Area
<100 square meters