Product Type: | Mosfet |
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Product Category: | Mosfet |
Description: | Mosfet 800V N-CH Q-Fet Advance C-Series |
Ds Breakdown Voltage-Min: | 800 V |
Configuration: | Single with Built-in Diode |
Polarity/Channel Type: | N-Channel |
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Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Id - Continuous Drain Current: | 8 A |
Rds On - Drain-Source Resistance: | 1.55 Ohms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 45 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
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