| Type: | Car Power Inverter |
|---|---|
| Certification: | CE, ISO9001, RoHS |
| Description: | Extremely Low Switching Loss |
| Characteristics: | Excellent Stability and Uniformity |
| Applications: | PC Power |
| Industries: | LED Lighting |
| Samples: |
|---|
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Audited Supplier | Parameter | Value | Unit |
| VDS | 650 | V |
| ID, pulse | 96 | A |
| RDS(ON), max @ VGS=10V | 99 | mΩ |
| Qg | 66.6 | nC |
| Product Name | Package | Marking |
| OSG65R099HSZAF | TO247 | OSG65R099HSZA |
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25 °C | ID |
32 | A |
| Continuous drain current1), TC=100 °C | 20 | ||
| Pulsed drain current2), TC=25 °C | ID, pulse | 96 | A |
| Continuous diode forward current1), TC=25 °C | IS | 32 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 96 | A |
| Power dissipation3) ,TC=25 °C | PD | 278 | W |
| Single pulsed avalanche energy5) | EAS | 648 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 50 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.45 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=1 mA | ||
| Gate threshold voltage | VGS(th) | 3.0 | 4.5 | V | VDS=VGS, ID=1 mA | |
Drain-source on- state resistance |
RDS(ON) |
0.090 | 0.099 | Ω |
VGS=10 V, ID=16 A | |
| 0.21 | VGS=10 V, ID=16 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS |
100 | nA |
VGS=30 V | ||
| -100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 10 | μA | VDS=650 V, VGS=0 V | ||
| Gate resistance | RG | 7.8 | Ω | ƒ=1 MHz, Open drain |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 3988 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz |
||
| Output capacitance | Coss | 210 | pF | |||
| Reverse transfer capacitance | Crss | 7.4 | pF | |||
| Effective output capacitance, energy related | Co(er) | 124 | pF | VGS=0 V, VDS=0 V-400 V |
||
| Effective output capacitance, time related | Co(tr) | 585 | pF | |||
| Turn-on delay time | td(on) | 46.0 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=20 A |
||
| Rise time | tr | 60.3 | ns | |||
| Turn-off delay time | td(off) | 93.0 | ns | |||
| Fall time | tf | 3.7 | ns |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 66.6 | nC | VGS=10 V, VDS=400 V, ID=20 A |
||
| Gate-source charge | Qgs | 20.6 | nC | |||
| Gate-drain charge | Qgd | 24.8 | nC | |||
| Gate plateau voltage | Vplateau | 6.7 | V |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=32 A, VGS=0 V | ||
| Reverse recovery time | trr | 151.7 | ns | IS=20 A, di/dt=100 A/μs |
||
| Reverse recovery charge | Qrr | 1.0 | μC | |||
| Peak reverse recovery current | Irrm | 12.3 | A |
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