Manufacturing Technology: | Discrete Device |
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Material: | Metal-Oxide Semiconductor |
Type: | N-type Semiconductor |
Samples: |
Mosfet
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
PARAMETER | SYMBOL | VALUE | UNIT | ||
DHFSJ8N65
|
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Drian-to-Source Voltage | VDSS | 650 | V | ||
Gate-to-Source Voltage | VGSS | ±30 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 7.6 | A | ||
(T=100ºC) | 4.8 | A | |||
Drain Current(Pulsed) | IDM | 23 | A | ||
Single Pulse Avalanche Energy | EAS | 91 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 2 | W | |
TC=25ºC | Ptot | 28 | W | ||
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast switching
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Low on resistance
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Low gate charge
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Low reverse transfer capacitances
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100% single pulse avalanche energy test
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100% ΔVDS test
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Applications |
Power factor correction(PFC).
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Switched mode power supplies(SMPS).
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Uninterruptible power supply(UPS).
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Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHFSJ8N65
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TO-220F
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DHFSJ8N65
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Pb-free | PIPE | 1000/box |
Suppliers with verified business licenses