| Manufacturing Technology: | Discrete Device |
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| Material: | Metal-Oxide Semiconductor |
| Type: | N-type Semiconductor |
| Samples: |
Mosfet
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| Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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| Payment Method: |
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| Initial Payment Full Payment |
| Currency: | US$ |
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| Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
Audited Supplier 
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 4N70/D4N70/B4N70/I4N70/E4N70 | F4N70 | ||||
| Maximum Drian-Source DC Voltage | VDS | 700 | V | ||
| Maximum Gate-Drain Voltage | VGS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 4 | A | ||
| (T=100ºC) | 2.5 | A | |||
| Drain Current(Pulsed) | IDM | 16 | A | ||
| Single Pulse Avalanche Energy | EAS | 190 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 0.24 | 0.24 | W |
| TC=25ºC | Ptot | 30 | 30 | W | |
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
| Low ON Resistance (Rdson≤3.3Ω) |
| Low gate charge(Typ: 12.7nC) |
| Low reverse transfer capacitances(Typ: 2.7pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of electron ballast and adaptor. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 4N70 | TO-220C | 4N70 | Pb-free | Tube | 1000/box |
| F4N70 | TO-220F | F4N70 | Pb-free | Tube | 1000/box |
| B4N70 | TO-251 | B4N70 | Pb-free | Tube | 3000/box |
| D4N70 | TO-252 | D4N70 | Pb-free | Tape & Reel | 2500/box |
| I4N70 | TO-262 | I4N70 | Pb-free | Tube | 1000/box |
| E4N70 | TO-263 | E4N70 | Pb-free | Tape & Reel | 800/box |
Suppliers with verified business licenses
Audited Supplier 
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