| Manufacturing Technology: | Discrete Device |
|---|---|
| Material: | Silicon |
| Type: | N-type Semiconductor |
| Samples: |
IGBT
|
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| Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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| Payment Method: |
|
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| Initial Payment Full Payment |
| Currency: | US$ |
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| Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
Audited Supplier 
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 1200 | V | ||
| Gate- Emitter Voltage | VGES | ±30 | V | ||
| Collector Current | IC(T=25ºC) | 80 | A | ||
| Collector Current | (Tc=100ºC) | 40 | A | ||
| Pulsed Collector Current | ICM | 160 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 40 | A | ||
| Diode Pulsed Current |
IFM
|
160 | A | ||
| Total Dissipation | TC=25ºC | PD | 388 | W | |
| TC=100ºC | PD | 155 | W | ||
| Junction Temperature | Tj | -45~175 | ºC | ||
| storage Temperature | Tstg | -45~150 | ºC | ||
| Features |
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Low Vcesat
|
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Low gate charge
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Excellent switching speed
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Easy paralleling capability due to positive
temperature Coefficient in Vcesat
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Tsc≥6µs
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Fast recovery full current anti-parallel diode
|
| Applications |
| Welding |
| Three-level inverter |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
|
DGC40F120M2
|
TO-247 |
DGC40F120M2
|
Pb-free | Tube | 1000/box |
Suppliers with verified business licenses
Audited Supplier 
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