| Manufacturing Technology: | Discrete Device |
|---|---|
| Material: | Metal-Oxide Semiconductor |
| Type: | N-type Semiconductor |
| Samples: |
Mosfet
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| Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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| Payment Method: |
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| Initial Payment Full Payment |
| Currency: | US$ |
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| Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
Audited Supplier 
| PARAMETER | SYMBOL | VALUE | UNIT | ||
|
D2N60
|
|||||
| Drian-to-Source Voltage | VDSS | 600 | V | ||
| Gate-to-Drian Voltage | VGSS | ±30 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 2 | 0A | ||
| (T=100ºC) | 1.3 | A | |||
| Drain Current(Pulsed) | IDM | 8 | A | ||
| Single Pulse Avalanche Energy | EAS | 60 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 0.28 | W | |
| TC=25ºC | Ptot | 35 | W | ||
| Junction Temperature | Tj | -55~150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| Fast Switching |
|
ESD improved capability
|
|
Low on resistance(Rdson≤1.0Ω)
|
|
Low gate charge(Typ: 32nC)
|
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Low reverse transfer capacitances(Typ: 7.0pF)
|
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| used in various power switching circuit for system miniaturization and higher efficiency. |
| Power switch circuit of electron ballast and adaptor. |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
|
D2N60
|
TO-252B |
D2N60
|
Pb-free | REEL | 5000/box |
Suppliers with verified business licenses
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