100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.
Features |
Fast Switching |
Low ON Resistance(Rdson≤0.55mΩ) |
Low Gate Charge(Typ: 43nC) |
Low Reverse Transfer Capacitances(Typ: 215pF) |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power switching applications |
Inverter management system |
Electric Tools |
Automotive Electronics |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
30H10/30H10I/30H10E/30H10K/30H10B |
30H10F |
Maximum Drian-Source DC Voltage |
VDS |
30 |
V |
Maximum Gate-Drain Voltage |
VGS |
±20 |
V |
Drain Current(continuous) |
ID(T=25ºC) |
100 |
A |
(T=100ºC) |
70 |
A |
Drain Current(Pulsed) |
IDM |
280 |
A |
Single Pulse Avalanche Energy |
EAS |
200 |
mJ |
Total Dissipation |
Ta=25ºC |
Ptot |
2 |
2 |
W |
TC=25ºC |
Ptot |
60 |
24 |
W |
Junction Temperature |
Tj |
-55~150 |
ºC |
storage Temperature |
Tstg |
-55~150 |
ºC |
Product Specifications and Packaging Models |
Product Model |
Package Type |
Mark Name |
RoHS |
Package |
Quantity |
30H10 |
TO-220C |
30H10 |
Pb-free |
Tube |
1000/box |
30H10F |
TO-220F |
30H10F |
Pb-free |
Tube |
1000/box |
30H10B |
TO-251 |
30H10B |
Pb-free |
Tube |
3000/box |
30H10K |
TO-252 |
30H10K |
Pb-free |
Tape & Reel |
2500/box |
30H10I |
TO-262 |
30H10I |
Pb-free |
Tube |
1000/box |
30H10E |
TO-263 |
30H10E |
Pb-free |
Tape & Reel |
800/box |