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1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet pictures & photos
1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet pictures & photos
1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet pictures & photos
1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet pictures & photos
1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet pictures & photos
1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet pictures & photos
  • 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet
  • 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet
  • 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet
  • 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet
  • 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet
  • 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet
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1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet

Reference FOB Price
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US $0.20 / Piece | 660 Pieces (Min. Order)
Description: Extremely Low Switching Loss
Characteristics: Excellent Stability and Uniformity
Applications: PC Power
Industries: LED Lighting
Transport Package: Air
Trademark: Orientalsemiconductor
Samples:
US$ 10/Piece 1 Piece(Min.Order)
| Request Sample
Shanghai Winture Electric Co., Ltd.
Gold Member Since 2022

Suppliers with verified business licenses

Manufacturer/Factory, Trading Company

Product Description

Company Info.

Basic Info.

Model NO.
OSS65R340JF PDFN8 X 8
Origin
China
HS Code
854129000
Production Capacity
20kkkk/Monthly

Product Description

   
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.

Features                                                                                                  
  • Low RDS(ON) & FOM
  • Extremely low switching loss
  • Excellent stability and uniformity
  • Easy to design in

Applications
  • PD charger
  • Large screen display
  • Telecom power
  • Server power


Key Performance Parameters

 
Parameter Value Unit
VDS, min @ Tj(max) 700 V
ID, pulse 36 A
RDS(ON), max @ VGS=10V 340 mΩ
Qg 9.6 nC

Marking Information

 
Product Name Package Marking
OSS65R340JF PDFN8×8 OSS65R340J

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage VDS 650 V
Gate-source voltage VGS ±30 V
Continuous drain current1), TC=25 °C
ID		 12
A
Continuous drain current1), TC=100 °C 7.6
Pulsed drain current2), TC=25 °C ID, pulse 36 A
Continuous diode forward current1), TC=25 °C IS 12 A
Diode pulsed current2), TC=25 °C IS, pulse 36 A
Power dissipation3), TC=25 °C PD 83 W
Single pulsed avalanche energy5) EAS 200 mJ
MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 15 V/ns
Operation and storage temperature Tstg, Tj -55 to 150 °C

Thermal Characteristics
 
Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 1.5 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition

Drain-source breakdown voltage
BVDSS		 650    
V		 VGS=0 V, ID=250 μA
700     VGS=0 V, ID=250 μA, Tj=150 °C
Gate threshold voltage VGS(th) 2.9   3.9 V VDS=VGS, ID=250 μA

Drain-source on- state resistance
RDS(ON)		   0.30 0.34
Ω		 VGS=10 V, ID=6 A
  0.73   VGS=10 V, ID=6 A, Tj=150 °C
Gate-source leakage current
IGSS		     100
nA		 VGS=30 V
    -100 VGS=-30 V
Drain-source leakage current IDSS     1 μA VDS=650 V, VGS=0 V


Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   443.5   pF
VGS=0 V, VDS=50 V, ƒ=100 KHz
Output capacitance Coss   59.6   pF
Reverse transfer capacitance Crss   1.7   pF
Turn-on delay time td(on)   22.4   ns
VGS=10 V, VDS=400 V, RG=2 Ω, ID=6 A
Rise time tr   17.5   ns
Turn-off delay time td(off)   40.3   ns
Fall time tf   7.2   ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   9.6   nC

VGS=10 V, VDS=400 V, ID=6 A
Gate-source charge Qgs   2.2   nC
Gate-drain charge Qgd   4.5   nC
Gate plateau voltage Vplateau   6.5   V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.3 V IS=12 A, VGS=0 V
Reverse recovery time trr   236.5   ns
VR=400 V, IS=6 A,
di/dt=100 A/μs
Reverse recovery charge Qrr   2.2   μC
Peak reverse recovery current Irrm   19.1   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
  5. VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.
1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet

 1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet
 

1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet1/3 Cost of The Gallium Nitride (GaN) Device in High Frequency Operations Super Si Oss65r340jf Pdfn8 X 8 Mosfet



 

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Shanghai Winture Electric Co., Ltd.
Gold Member Since 2022

Suppliers with verified business licenses

Manufacturer/Factory, Trading Company
Registered Capital
10000000 RMB
Plant Area
501~1000 square meters
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