• High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
  • High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
  • High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
  • High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink

High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink

Application: Aerospace, Electronics, Medical
Type: Ceramic Ring
Volume Resistivity: 1.4*10(14) Ω.Cm
Flexural Strength: 450MPa
Color: Light Grey
Dielectric Strength: 18.45 Kv/mm
Manufacturer/Factory & Trading Company

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Fujian, China
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Basic Info.

Model NO.
INC-AlN201155
Dielectric Constant
8.56 (1MHz)
Surface Roughness
0.3-0.5
Thermal Conductivity
(25°c) 180 W/Mk
Density
3.31g/cm3
Transport Package
Carton Packing
Specification
Customized
Trademark
INNOVACERA
Origin
Fujian, China
Production Capacity
200000 Piece/Pieces Per Month

Product Description

High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink

 

 

 

Thermal Expansion Aluminum Nitride Heat Sink Ceramic Plate Supplier

 

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low

 

dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic,

 

high thermal resistance, chemical resistance, and the linear expansion coefficient is similar with Si,which is

 

widely used in communication components, high power led, power electronic devices and other

 

fields.Special spec products can be produced upon requests.

 

 

PRODUCT PERFORMANCE


- High thermal conductivity, high flexural strength, high temperature


- Good electrical insulation


- Low dielectric constant and loss


- Able to be laser drilled, metallized, plated and brazed

 

 

Product Features

 

1.Uniform microstructure


2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives


3.High electrical resistivity


4.Thermal expansion coefficient close to that of Silicon


5.Resistance to corrosion and erosion


6.Excellent thermal shock resistance


7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation

 

occurs around 780°C; the surface layer protects the bulk up to 1380°C).

 

High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink

 

 
Application
 
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
 
 
 
 
- RF / Microwave Components
- Power Modulus
- Power Transformers
- High Power LED Package
 
 
 
 
- Laser Diode Sub-mounts
- LED Chip Sub-mount
- Microelectronic Packages
- Transistors
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink

 

 

 

 

 

- High Thermal Conductivity Substrates

 

for LED & Power Electronics

 

- Substrates for Power Electronics

 

Aluminium Nitride Material Properties
 
 
 
 
Material
 
ALN
 
 
Item No.
 
INC-AN180
INC-AN200
INC-AN220
Color
 
Gray
Gray
Beige
Main Content
 
96%ALN
96%ALN
97%ALN
Main Characteristics
 
High Thermal Conductivity,Excellent Plasma Resistance
 
 
Main Applications
 
Heat Dissipating Parts,Plasma Resistance Parts
 
 
Bulk Density
 
3.30
3.30
3.28
Water Absorption
 
0
0
0
Vickers Hardness(Load 500g)
 
10.0
9.5
9.
Flexural Strength
 
>=350
>=325
>=280
Compressive Strength
 
2500
2500
-
Young' Modulus of Elasticity
 
320
320
320
Poisson's Ratio
 
0.24
0.24
0.24
Fracture Toughness
 
-
-
-
Coefficient Linear Thermal Expansion
40-400degree
4.8
4.6
4.5
Thermal Conductivity
20degree
180
200
220
Specific Heat
 
0.74
0.74
0.76
Thermal Shocking Resistance
 
-
-
-
Volume Resistivity
20degree
>=10-14
>=10-14
>=10-13
Dielectric Strength
 
>=15
>=15
>=15
Dielectric Constant
1MHz
9
8.8
8.6
Loss Tangent
*10-4
5
5
6
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
High Thermal Conductivity 170m/Mk Aluminum Nitride Ceramic Substrate for Heat Sink
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