| Application: | Lorry, Truck, Car, Mini Car, Microbus |
|---|---|
| Certification: | ISO, RoHS |
| Voltage: | 40V |
| Power Supply: | Battery |
| Type: | Car Electric Heating Cup |
| Description: | Extremely Low Switching Loss |
| Samples: |
|---|
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Audited Supplier | Parameter | Value | Unit |
| VDS | 40 | V |
| ID, pulse | 800 | A |
| RDS(ON), max @ VGS=10V | 1.1 | mΩ |
| Qg | 75.9 | nC |
| Product Name | Package | Marking |
| SFS04R011UGNF | PDFN5×6 | SFS04R011UGN |
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 40 | V |
| Gate-source voltage | VGS | ±20 | V |
| Continuous drain current1), TC=25 °C | ID | 200 | A |
| Pulsed drain current2), TC=25 °C | ID, pulse | 800 | A |
| Continuous diode forward current1), TC=25 °C | IS | 200 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 800 | A |
| Power dissipation3), TC=25 °C | PD | 202 | W |
| Single pulsed avalanche energy5) | EAS | 240 | mJ |
| Operation and storage temperature | Tstg, Tj | -55 to 175 | °C |
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.74 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0 V, ID=250 μA | ||
| Gate threshold voltage | VGS(th) | 2.0 | 4.0 | V | VDS=VGS, ID=250 μA | |
| Drain-source on- state resistance | RDS(ON) | 1.0 | 1.1 | mΩ | VGS=10 V, ID=20 A | |
| Gate-source leakage current | IGSS |
100 | nA |
VGS=20 V | ||
| -100 | VGS=-20 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS=40 V, VGS=0 V | ||
| Gate resistance | RG | 3.2 | Ω | ƒ=1 MHz, Open drain |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 5453 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz |
||
| Output capacitance | Coss | 1951 | pF | |||
| Reverse transfer capacitance | Crss | 113 | pF | |||
| Turn-on delay time | td(on) | 17.5 | ns | VGS=10 V, VDS=40 V, RG=2 Ω, ID=40 A |
||
| Rise time | tr | 25.2 | ns | |||
| Turn-off delay time | td(off) | 48.2 | ns | |||
| Fall time | tf | 25.7 | ns |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 75.9 | nC | VGS=10 V, VDS=40 V, ID=40 A |
||
| Gate-source charge | Qgs | 25 | nC | |||
| Gate-drain charge | Qgd | 15.3 | nC | |||
| Gate plateau voltage | Vplateau | 4.9 | V |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V | ||
| Reverse recovery time | trr | 61.4 | ns | VR=40 V, IS=40 A, di/dt=100 A/μs |
||
| Reverse recovery charge | Qrr | 86 | nC | |||
| Peak reverse recovery current | Irrm | 2.7 | A |
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