• New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n
  • New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n
  • New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n
  • New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n
  • New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n
  • New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n

New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n

Certification: RoHS
Shape: ST
Shielding Type: /
Cooling Method: /
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
Diamond Member Since 2016

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Rating: 5.0/5
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Basic Info.

Model NO.
IRF1010N
Encapsulation Structure
Chip Transistor
Power Level
High Power
Material
Silicon
Product Number
Irf520npbf
Description
Mosfet N-CH 100V 9.7A To220
Category
Mosfet
Product
Irf520
Transport Package
/
Specification
/
Trademark
CHN
Origin
Chn

Product Description

Product Description

  
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated


 
New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n

New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n

New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n

New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n
New and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010nNew and Original Irf1010npbf in-Line Power Field-Effect Transistor Irf1010n






 

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