• Irg4PF50W Insulated Gate Bipolar Transistor
  • Irg4PF50W Insulated Gate Bipolar Transistor
  • Irg4PF50W Insulated Gate Bipolar Transistor
  • Irg4PF50W Insulated Gate Bipolar Transistor
  • Irg4PF50W Insulated Gate Bipolar Transistor
  • Irg4PF50W Insulated Gate Bipolar Transistor

Irg4PF50W Insulated Gate Bipolar Transistor

Certification: RoHS
Shape: ST
Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
Structure: NPN
Encapsulation Structure: Plug-in Transistor
Diamond Member Since 2016

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Rating: 5.0/5
Trading Company

Basic Info.

Model NO.
IRG4PF50W
Power Level
High Power
Material
Silicon
Switching Frequency
Gen 4 8-30 kHz
Technology
IGBT Gen 4
Package / Case
To247
Eoff
1.06mj
Switching Frequency Min Max
8.0kHz 30.0kHz
Ets (Max)
1.25mj (1.7mj)
Ptot Max
200.0W
Use
Equipment
Specification
Use - welding machine equipment, UPS power supply

Product Description

IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR 
Irg4PF50W Insulated Gate Bipolar Transistor

Irg4PF50W Insulated Gate Bipolar Transistor
 



1. High-performanced, compatible and reliable.
2. 100% original and up-to-date.
3. Secure and environment-friendly
4.  high-levelled low-power-consumption designed
5. Durable, steady and stable


 

Part Number

IRG4PF50W

package

DIP / SOP / QFP

Date Code

16+,17+,18+,Newest

Payment

T/T , Western Union ,Visa ;HSBC

Shipment

UPS, DHL ,TNT ,FEDEX or by your own forwarder

Brand

New and original


Irg4PF50W Insulated Gate Bipolar Transistor

Certifications

 

In 2010, the company registered the Chinese and English trademarks of "JDP" Jin Dapeng, invested
a lot of energy in product research and development, and
successfully developed a series of high-quality self-brand electronic components, which has been
recognized and supported by the majority of application customers


Irg4PF50W Insulated Gate Bipolar Transistor
Irg4PF50W Insulated Gate Bipolar Transistor

 




 

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