| Manufacturing Technology: | Laser Diode |
|---|---|
| Material: | Element Semiconductor |
| Type: | N-type Semiconductor |
| Package: | To18-5.6mm |
| Signal Processing: | Simulation |
| Application: | Direct Imaging for PCB, Laser Module, Industry |
| Samples: |
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| Customization: |
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Item |
Symbol |
Absolute Maximum Ratings |
Unit |
Optical output power |
Po |
500 | mW |
LD Reverse Voltage |
Ir (LD) |
5 |
V |
Storage Temperature |
Tstg |
-35 to +85 |
ºC |
Operating Case Temperature |
Tc |
0 to +30 |
ºC |
| Parameter | Symbol | Min | Typ | Max | Unit | Test Condition |
| Lasing Wavelength | λp | 398 | 404 | 410 | nm | Po=500mW |
| Threshold Current | Ith | - | - | 160 | mA | - |
| Operating Current | Iop | - | 390 | 420 | mA | Po=400mW |
| Operating Voltage | Vop | - | - | 5.5 | V | Po=400mW |
| Beam Divergence Parallel to the junction | - | 5 | 13 | 25 | ° | Po=400mW, Full angle |
| Beam Divergence Perpendicular to the junction | - | 30 | 45 | 60 | ° | Po=400mW, Full angle |
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