| Manufacturing Technology: | Optoelectronic Semiconductor |
|---|---|
| Material: | Element Semiconductor |
| Type: | Laser Diode |
| Package: | C-Mount |
| Signal Processing: | Simulation |
| Application: | Laser Module, Medical Use, Industrial Use |
| Customization: |
|---|
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Parameter |
Symbol | Ratings | Unit |
| Optical Output Power | Po | 3000 | mW |
| LD Reverse Voltage | Vr (LD) | 2 | V |
| Operating Temperature | Tc | +10~+30 | ºC |
| Storage Temperature | Tstg | +10~+85 | ºC |
Item |
Condition | Symbol | Min | Typ. | Max | Unit |
| Dominant Wavelength | CW | λd | 808 | - | 805 | nm |
| Operating Voltage | CW | Vop | 1.8 | - | 2.4 | V |
| Operating Current | CW | Icp | - | - | 3700 | mA |
| Threshold Current | CW | Ith | - | - | 700 | mA |
| Beam Divergence(Parallel) | CW | θ// | - | 12 | - | ° |
| Beam Divergence (Perpendicular) |
CW | θ+ | - | 40 | - | ° |
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