| Manufacturing Technology: | Discrete Device |
|---|---|
| Material: | Metal-Oxide Semiconductor |
| Type: | N-type Semiconductor |
| Package: | to-220f |
| Application: | Power Switching, Converters,Full Bridge Control |
| Model: | Dh100n06f |
| Customization: |
|---|
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| Description |
| These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. |
| Features |
| Low on resistance |
| Low gate charge |
| Fast switching |
| Low reverse transfer capacitances |
| 100% single pulse avalanche energy test |
| 100% ΔVDS test |
| Applications |
| Power switching applications |
| DC-DC converters |
| Full bridge control |
| PARAMETER | SYMBOL | RATING | UNIT | ||
| DH100N06/DHI100N06/DHE100N06/DHB100N06/DHD100N06 | DHF100N06 | ||||
| Drian-to-Source Voltage | VDSS | 68 | V | ||
| Gate-to-Source Voltage | VGSS | ±20 | V | ||
| Continuous Drain Current | ID TC=25ºC | 100 | A | ||
| TC=100ºC | 70 | A | |||
| Pulsed Drain Current | IDM | 400 | A | ||
| Single Pulse Avalanche Energy | EAS | 600 | mJ | ||
| Power Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 145 | 35 | W | |
| Isolation Voltage | VISO | / | 2500 | V | |
| Junction Temperature Range | Tj | -55~175 | ºC | ||
| Storage Temperature Range | Tstg | -55~175 | ºC | ||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DH100N06 | TO-220C | DH100N06 | Pb-free | Tube | 1000/box |
| DHF100N06 | TO-220F | DHF100N06 | Pb-free | Tube | 1000/box |
| DHB100N06 | TO-251 | DHB100N06 | Pb-free | Tube | 3000/box |
| DHD100N06 | TO-252 | DHD100N06 | Pb-free | Tape & Reel | 2500/box |
| DHI100N06 | TO-262 | DHI100N06 | Pb-free | Tube | 1000/box |
| DHE100N06 | TO-263 | DHE100N06 | Pb-free | Tape & Reel | 800/box |
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