Manufacturing Technology: | Discrete Device |
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Material: | Silicon |
Type: | N-type Semiconductor |
Samples: |
Fast Recovery Diode
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Features |
Low power loss, |
high efficiency Low forward voltage, |
high current capability High surge capacity |
Super fast recovery times |
high voltage |
Applications |
Switching Power Supply |
Power Switching Circuits |
General Purpose
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PARAMETER | SYMBOL | VALUE | UNIT | ||
Peak Repetitive Reverse Voltage | VRRM | 600 | V | ||
Working Peak Reverse Voltage | VRWM | 600 | V | ||
DC Blocking Voltage | VR | 600 | V | ||
Average Rectified Forward Current TO-220F TC=135ºC | IF(AV) | 8 | A | ||
Repetitive Peak Surge Current | IFRM | 12 | A | ||
Nonrepetitive Peak Surge Current | t=8.3ms | IFSM | 80 | A | |
Avalanche Energy(single) | L=1mH | EAS | 20 | mJ | |
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
MUR860 | TO-220-2L | MUR860 | Pb-free | PIPE | 1000/box |
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