Manufacturing Technology: | Discrete Device |
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Material: | Sic |
Type: | N-type Semiconductor |
Samples: |
Mosfet
|
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Customization: |
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Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
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Payment Method: | |
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Initial Payment Full Payment |
Currency: | US$ |
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Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
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Suppliers with verified business licenses
Features |
Higher System Efficiency
|
Reduced Cooling Requirements
|
Increased Power Density
|
Increased System Switching Frequency
|
Applications |
Power Supplies |
High Voltage DC/DC Converters |
Motor Drives |
Switch Mode Power Supplies |
Pulsed Power applications |
PARAMETER | SYMBOL | VALUE | UNIT | |||
Drian-to-Source Voltage | VDSS | 1700 | V | |||
Gate-to-Source Voltage max | VGSS | -8/+25 | V | |||
Gate-to-Source Voltage max | VGSS | -5/+20 | V | |||
Continuous Drain Current |
VGS=20V,TC=25ºC
|
5 | A | |||
VGS=20V,TC=100ºC
|
3.5 | A | ||||
Pulsed Drain Current | ID(PULSE) | 6 | A | |||
Power Dissipation | Tj=150ºC | PD | 69 | W | ||
TC=25ºC | PD | W | ||||
Junction Temperature Range | Tj | -55~150 | ºC | |||
Storage Temperature Range | Tstg | -55~150 | ºC |
Parameter | Symbol | Rating | Unitº |
Thermal Resistance,Junction to Case-sink | RthJC | 1.8 | ºC/W |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DCC1K0M170G1
|
TO-247 |
DCC1K0M170G1
|
Pb-free | Tube | 300/box |
Suppliers with verified business licenses