• 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
  • 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
  • 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
  • 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
  • 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
  • 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn

20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn

Voltage: 900V
Current: 20A
Manufacturing Technology: Discrete Device
Samples:
US$ 0.15/Piece 1 Piece(Min.Order)
| Order Sample
Mosfet
Customization:
Shipping Cost:

Estimated freight per unit.

about shipping cost and estimated delivery time.
Payment Method: visa mastercard discover JCB diners club american express T/T
  Initial Payment Full Payment
Currency: US$
Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
From payment to delivery, we protect your trading.
20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn pictures & photos
20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company

Basic Info.

Model NO.
20N90D
Type
N-type Semiconductor
Material
Metal-Oxide Semiconductor
Package
to-3pn
Application
Power Switching Circuit
Model
20n90d
Batch Number
2021
Brand
Wxdh
Transport Package
Tube
Trademark
WXDH
Origin
Wuxi, China
HS Code
8541290000
Production Capacity
500000000 Pieces/Year

Packaging & Delivery

Package Size
50.00cm * 20.00cm * 30.00cm
Package Gross Weight
15.000kg

Product Description

20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
 
PARAMETER SYMBOL VALUE UNIT
 
Drian-to-Source Voltage VDSS 900 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current(continuous) ID(T=25ºC) 20 A
(T=100ºC) 13.2 A
Drain Current(Pulsed) IDM 80 A
Single Pulse Avalanche Energy EAS 1000 mJ
Peak Diode Recovery dv/dt dv/dt 5 V/ns
Total Dissipation Ta=25ºC Ptot 3 W
TC=25ºC Ptot 250 W
Junction Temperature Tj -55~150 ºC
storage Temperature Tstg -55~150 ºC
 
Features
Fast Switching
ESD improved capability
Low ON Resistance(Rdson≤0.4Ω)
Low Gate Charge(Typ: 162nC)
Low Reverse Transfer Capacitances(Typ: 63.5pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
 
Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
20N90D TO-3PN 20N90D Pb-free Tube 300/box
20N90B TO-247 20N90B Pb-free Tube 300/box
 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now

You Might Also Like

From payment to delivery, we protect your trading.
20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn pictures & photos
20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
US $0.01-1.5 / Piece
Min. Order: 5,000 Pieces
Diamond Member Since 2021

Suppliers with verified business licenses

Secured Trading Service
Manufacturer/Factory & Trading Company
Number of Employees
156
Year of Establishment
2004-12-07